Dependence of the Sensitivity of p-n Junctions to Nonuniform Deformation on the Depth of the Junction Below the Surface

Abstract

An investigation was made of the influence of nonuniform deformation, produced by a corundum needle pressing against a silicon p-n junction, on the current flowing through the junction. Junctions of different depths were produced by ion bombardment. When the depth of a junction below the deformed surface of a semiconductor was increased, the pressure-induced rise of the current decreased. When the junction depth was 0.1-0.2 μ, the forward and reverse branches of the current—voltage characteristics were affected by pressure (within the limits of the sensitivity of the apparatus employed). When the junction depth was greater, an appreciable sensitivity of the current to pressure was observed only in the forward branch. However, when a force F, exceeding a certain critical value Fcr, was applied to the needle, the reverse branch again became sensitive to pressure. The value of Fcr increased with increasing junction depth.