Abstract

Phase pure Cu2ZnSnS4 thin films were fabricated by simple dip coating technique. Precursor films were coated onto glass substrates using stable solutions of copper, zinc and tin dissolved in 2 methoxyethanol and monoethanolamine. These precursor films were sulphurized in N2+H2S atmosphere at different temperatures ranging from 400°C to 600°C. XRD analysis and Raman studies revealed a single CZTS phase for the films sulphurised at 500°C and 550°C, but good crystallinity was observed for the film sulphurized at 550°C. Rietveld method was used for structural refinement. SEM and FESEM studies indicate good surface morphology and large grains in the film sulphurized at 550°C. The film exhibited an optical absorption coefficient of >104cm−1 and an optical band gap of 1.4eV. The carrier concentration, resistivity and mobility are 1.434×1018cm−3, 5.3cm2/Vs and 0.828Ωcm, respectively and the conduction is p-type. The photovoltaic properties are suitable for thin film solar cell fabrication.

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