Abstract
Cu(II)O has emerged as a promising material for numerous applications including photodetectors due to its narrow bandgap (1.5 eV), environmentally innocuous nature, low cost, and ease of fabrication. Herein, the optoelectrical investigation of polycrystalline cupric oxide (Cu(II)O) based photodetectors has been studied. The Cu(II)O film has been fabricated over FTO substrate which has been assembled into a sandwich structured photodetector device to record the current–voltage (I-V) and current–time (I-t) characteristics. The fabricated device demonstrates responsivity of 60 µA/W and detectivity of 1.9 × 108 Jones. The proposed process is facile, low cost and even suitable for flexible photodetectors. Furthermore, the Cu(II)O films exhibit promising photon sensing characteristics in visible and near UV light illumination and can be explored for various other applications in photodetection and photovoltaic studies.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
