Abstract
We describe here the realization by self assembly of high quality single wall carbon nanotube field effect transistors (CNTFET). We solve the random deposition issue thanks to a high yield selective placement of single wall carbon nanotubes (SWNTs) on predefined region. This has been realised by the use self-assembled monolayers (SAMs) which modify the surface properties of a prepatterned substrate. The process has been optimized in order to avoid the formation of bundles and to obtain the suitable high densities necessary for the realisation of integrated devices. Then we show that such positioned SWNTs can be electrically contacted to realize high performance transistors, which very well compare with state-of-the-art CNTFETs.
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