Abstract
AbstractLaser diodes monolithically integrated with a passive waveguide is fabricated by using a quantum‐well intermixing. This technique first consists of using a photolithography and reactive ion etching process to create a Si3N4 implant mask region on the sample. This is followed by a 1‐MeV phosphorous ion implantation at a dose of 5×1014 P+ ions/cm2 at 200 °C. A subsequent two‐step RTA annealing induces QW intermixing through the diffusion of the point defects. For the integration of a laser diode and a passive waveguide, the mirror facet is formed by creating a deeply‐etched trench between an active and passive region by RIE etching. The lasing operation and shifted lasing wavelengths are measured and compared experimentally. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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