Abstract
We demonstrate that phosphorous ion implantation in InGaAs/InP quantum wells can be used to produce large (from 1550 to 1200 nm) blueshifts of the band edge. This reproducible technique of lateral band-gap control can be used in quantum-well photonic integrated circuits to produce regions of low-loss waveguide, e.g., for interconnects or large passive cavities. Phosphorous implants with subsequent p-type InP regrowth produces blueshifted quantum-well diodes with good reverse-bias characteristics and low-loss p-i(multiple quantum well)-n waveguides.
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