Fabrication of artificial graphene in a GaAs quantum heterostructure

Abstract

The unusual electronic properties of graphene, which are a direct consequence of its two-dimensional honeycomb lattice, have attracted a great deal of attention in recent years. Creation of artificial lattices that re-create graphene's honeycomb topology, known as artificial graphene, can facilitate the investigation of graphenelike phenomena, such as the existence of massless Dirac fermions, in a tunable system. In this work, the authors present the fabrication of artificial graphene in an ultrahigh quality GaAs/AlGaAs quantum well, with lattice period as small as 50 nm, the smallest reported so far for this type of system. Electron-beam lithography is used to define an etch mask with honeycomb geometry on the surface of the sample, and different methodologies are compared and discussed. An optimized anisotropic reactive ion etching process is developed to transfer the pattern into the AlGaAs layer and create the artificial graphene. The achievement of such high-resolution artificial graphene should allow the observation for the first time of massless Dirac fermions in an engineered semiconductor.