Abstract
We studied ultraviolet micro imprint lithography (UV-MIL) for the manufacture of amorphous silicon (a-Si) thin-film transistors (TFTs) using a master mold. A teflon amorphous fluoropolymer produced by rotary vacuum evaporation was used to detach the imprint resist from a master mold. To remove the residual resist layer, the sample was dipped in acetone and then dry etched by reactive ion etching. The a-Si TFT having 10μm channel length produced by UV-MIL exhibited a field-effect mobility of 1.2cm2/Vs, threshold voltage of 1.9V and on/off current ratio of 108.
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