Abstract
Highly c-axis oriented AlN films were successfully deposited on SiO2/Si and sapphire substrates by RF magnetron sputtering. The optimum deposition conditions are nitrogen gas ratio (N2/Ar + N2) of 40%, RF power of 400 W, deposition pressure of 4 mTorr, and substrate temperature of 200°C. The full width at half maximum intensity of AlN(002) peak of AlN films on SiO2/Si and sapphire substrates sputtered at the optimum deposition conditions were about 0.26° and 0.2°, respectively. The phase velocity of the fabricated SAW device with AlN/SiO2/Si and AlN/sapphire layered structure was estimated to be about 4996 and 5589 m/s, respectively.
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