Fabrication of advanced thin film for high performance display by nanoimprinting process via gallium oxide solution doped tin

Abstract

Line pattern replication process through nanoimprint lithography (NIL) method has been used in numerous of research fields. NIL technology is not yet utilized for displays industry, and we propose an alignment layer of the sol-gel process using NIL. One-dimensionally nanopatterned by polydimethylsiloxane sheets cause surface changes in hybrid SnGaO thin films mixed in a 3:7 ratio, which aligns the liquid crystals (LCs) uniformly in the line pattern direction. These surface changes are confirmed through atomic force microscopy data analysis, and changes in surface shapes for different the curing temperatures in the furnace are analyzed. X-ray photoelectron spectroscopy shows that the chemical composition of the thin films changes according to curing temperatures, and the intensities of SnO and GaO increase exponentially at 200 °C compared to those at 50 °C. Through this, the van der Waals force increases between surface molecules, in the anisotropic direction to help align the LCs. Furthermore, we performed polarized optical microscopy and pre-tilt angle analysis confirm that the LCs are energized uniformly. Finally, the performance of an actual display device transmittance and electro-optical properties; the transmittance of SnGaO is 4.51p% higher than that of the currently commercialized PI-rubbing, and the voltage-transmittance curve is a perfect graph.