Fabrication of Active Light-Emitting Device Combined with ZnO Transistors

Abstract

Organic light-emitting diodes (OLEDs) have received much attention owing to their flexibility, low cost, and ease of processing. Although the active matrix display is a suitable system for what transistors and OLEDs with a large aperture ratio should be fabricated in each pixel. In this work, as one of the methods of expanding effective light-emitting area for active matrix displays, a new type of active light-emitting device combined with a ZnO transistor is proposed. The low-temperature, low-damage sputtering method improves on current by two orders of magnitude. A luminance of the active light-emitting device driven by ZnO transparent field-effect transistor (FET) was obtained. We fabricated a device with ZnO transparent FET and reported the electrical properties of ZnO FET.