Abstract
Aluminum oxide (Al2O3) films were fabricated through the oxidation of ultrathin aluminum nitride (AlN) films. The fabricated films exhibited a leakage current reduction compared to that of conventional Al2O3 films fabricated using atomic layer deposition. This reduction in the leakage current can be attributed to the formation of θ-Al2O3, which has a wider-bandgap than γ-Al2O3. The formation of θ-Al2O3 was attributed to the residual stress caused by the oxidation of the AlN thin films.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
