Abstract
Aluminum oxide (Al2O3) films were fabricated through the oxidation of ultrathin aluminum nitride (AlN) films. The fabricated films exhibited a leakage current reduction compared to that of conventional Al2O3 films fabricated using atomic layer deposition. This reduction in the leakage current can be attributed to the formation of θ-Al2O3, which has a wider-bandgap than γ-Al2O3. The formation of θ-Al2O3 was attributed to the residual stress caused by the oxidation of the AlN thin films.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
