Abstract
Di-block copolymer polystyrene-block-polymethyl methacrylate (PS-b-PMMA) was used to make patterns over a large area of as grown LEDs. The polymer patterns on LEDs surface could be transferred to the underlying p-GaN, the topmost layer of as grown LEDs by both reactive ion etching (RIE) and photo-enhanced chemical (PEC) etching. Removal of remaining polymer chains results in patterned LEDs which shows higher light extraction efficiency. In our experiment, much higher intensity for patterned LEDs in both photoluminescence (PL) and electroluminescence (EL) data plot were found. Similar improvements were found in I–V and L–I curves for patterned LEDs.
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