Fabrication of 200nm field effect transistors by X-ray lithography using a laser-plasma X-ray source

Abstract

The laser-plasma X-ray source at the Rutherford Appleton Laboratory has been used in a series of preliminary lithography trials in order to establish the feasibility of using this source for deep submicron device fabrication. These trials have provided a demonstration of photoresist linewidths down to 130nm and functional silicon FETs have been produced with 200nm gate electrodes. These devices show peak transconductances of 220mS/mm and 100mS/mm for n-channel and p-channel cases respectively. This paper summarises the lithographic procedures and resulting device characteristics.