Fabrication of 150‐nm AlGaN/GaN field‐plated High Electron Mobility Transistors using i ‐line stepper

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This article reports a high throughput 150-nm-gate AlGaN/GaN high electron mobility transistor (HEMT) process using i-line stepper lithography and a thermal reflow technique. Optimizing thermal reflow conditions, fabrication of a 150-nm gate structure was successfully realized with the initial resist opening of 0.7 μm. AlGaN/GaN field-plated HEMTs were fabricated on a semi-insulating SiC substrate by using this process. In spite of unoptimized structures, fabricated 150-nm gate devices exhibited the maximum drain current of 0.65 A/mm and the gate-drain breakdown voltage exceeding 200 V. Based on cold HEMT extraction measurements, the average gate length of 187 nm and the standard deviation of 30 nm were obtained on a quarter 4-in. wafer.