Fabrication of [110]-aligned Si quantum wires embedded in SiO 2 by low-energy oxygen implantation

Abstract

Si quantum wires (QWRs) embedded in SiO 2 are successfully fabricated by low-energy oxygen implantation on a V-groove patterned substrate. Si QWRs aligned to [1 1 0] appeared at the bottom-center of the V-groove. The [1 1 0] cross-section of the Si QWR is a hexagon encompassed by four Si {1 1 1} and two Si {0 0 1} lateral facets.