Fabrication of 0.2 μm gate pseudomorphic inverted HEMT by phase-shifting technology

Abstract

A phase-shifter edge line (PEL) mask method is applied to the gate fabrication process of InGaAs AlGaAs pseudomorphic inverted high electron mobility transistors (HEMTs). In phase-shifting technologies, the PEL mask method suits forming a fine line pattern owing to its high resolution. Mushroom shaped 0.2 μm gate pseudomorphic inverted HEMTs fabricated by using the PEL mask method show high d.c. and r.f. performances. As one of the applications of the 0.2 μm gate pseudomorphic inverted HEMTs, a decision circuit IC for 10 Gb/s optical communication systems is successfully fabricated.