Abstract
The superiority of the pseudomorphic inverted high electron mobility transistor (HEMT) as a low-voltage operating device was revealed. To study the high-frequency properties of the FET, two types of frequency-variable measurement systems which represented active load and common-source circuits were employed. It was confirmed that the feature of low knee voltage in static I-V was preserved above 100 kHz, which predicts the microwave characteristics of the device. Estimated output power was 50% higher than that of the conventional pseudomorphic HEMT at a low supply voltage. >
Published Version
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