Fabrication and X-Ray Excited Luminescence of Ga- and In-Doped ZnO Nanorods

Abstract

Ga- and In-doped ZnO nanorods were prepared by low temperature hydrothermal method, and their structure, morphology and luminescence properties were investigated through X-ray diffraction, scanning electron microscopy, photoluminescence and X-ray excited fluorescence spectrometers. The results indicated that the nanorods had a hexagonal wurtzite structure, and the average diameter and length of the nanorod were about $1~\mu\hbox{m}$ and $10~\mu\hbox{m}$ , respectively. Ultraviolet and X-ray excited luminescence spectra of the nanorods show a relatively strong visible emission peak located around 450-750 nm. The In-doped ZnO nanorods exhibited a superior X-ray excited luminescence performance, which implies that it is expected to be a promising candidate for applications in high-spatial-resolution and fast X-ray imaging detector.