Abstract
In this research, heterojunction was developed by using SiC quantum dots. High-quality n-ZnO film on commercial p-SiC quantum dots has been prepared based on utilizing pulse laser deposition technique and spin coating under the pressure of 10−5 mbar, deposited at room temperature on a substrate of glass at various values of the thickness (113.3 and 160) nm, respectively. Then, annealed for two hours at 450 °C. ZnO/SiC QDs were described by the estimation of XRD and FE-SEM. XRD estimation uncovered that the SiC QDs prepared by spin coating with dye were hexagonal structure. The pulse laser deposition PLD method used to make ready ZnO thin film was hexagonal wurtzite with high-quality polycrystalline. UV-Visible spectrophotometer utilized in the range of (200-800) nm to determine spectral absorbance, transmittance, and energy gap of heterojunction. The optical properties results showed that the transmittance was (98 and 87)% for ZnO film and SiC, respectively. The pure ZnO thin film allowed a direct energy gap (Eg) that was 3.8 eV, while SiC QDs were 2.65 eV direct energy gap.
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