Abstract
We report the fabrication CdS/p-Si heterojunction via a successive ionic layer adsorption and reaction (SILAR) technique with different CdS thickness controlled by SILAR cycles. A brief investigation has been carried out to study the nano-structural, photodetecting and optical characteristics of prepared CdS/p-Si heterojunction. Structural and morphological characterizations confirmed the formation of crystalline hexagonal CdS thin films with nano-sized grain particles that develops closed packed with SILAR cycles. Photoluminescence (PL) have been studied that emission peak at 472 nm associated with excitonic emission and a broad green emission peak positioned at 553 nm from the recombination of S−2 vacancy with valence band of CdS film. Current–voltage (I–V) and optoelectronic properties of prepared samples presented the rectification properties having the ideality factor more than unity, while the peaks of response have two peaks located at 450 and 800 nm with maximum responsivity at 6 SILAR cycles.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Materials Science: Materials in Electronics
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
