Abstract
We investigated under-gate type carbon nanotube field emitter arrays (FEAs) for back light unit (BLU) in liquid crystal display (LCD). Gate oxide was formed by wet etching of ITO coated glass substrate instead of depositing SiO 2 on the glass substrate. Wet etching is easier and simpler than depositing and etching thick gate oxide to isolate the gate metal from cathode electrode in triode. To optimize the triode, we simulated the electric field distribution and electron trajectory in triode structures by the SIMION simulator. CNT emitters were formed using screen printing of photosensitive CNT paste. Field-emission characteristics of triode structure were measured. The maximum current density of 92.5 μA/cm 2 was when the gate and anode voltage was 95 and 2500 V, respectively, at the anode–cathode spacing of 1500 μm.
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