Abstract
This article first describes the preparation and properties of small area (∼1 μm2)Pb/Bi/In-oxide–Ag junctions made by evaporation through metal masks. These junctions have successfully been used in a 230 GHz receiver. We then describe the preparation and properties of two slightly different types of Nb/Al-based superconductor–insulator–normal conductor (SIN) junctions applying a ‘‘trilayer technique’’ similar to that used in the fabrication of Nb–Al-oxide–Nb superconductor–insulator–superconductor junctions. For one type of the Nb/Al-based SIN junctions the base layer consists of Nb, for the other type, the base layer is made of Al. In practical applications these devices will operate at temperatures where the Al is in the normal state. Junctions with areas down to about 0.5 μm2 have been made.
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