Abstract
Square single crystal silicon ingots with 3-inch sides are grown by producing uniform melt temperature distribution in the crucible. The growth of square ingots is described in a model where supercooling is present at the growth interface, and where growth rates vary for different faces. A relatively high conversion efficiency of 12–13% is obtained from square solar cells. Inhomogeneities in the solar cells are revealed by studying laser-beam induced current images and crystal defect density distribution. The packing density in modules increases up to the 0.93–0.95 level. As a result, modular efficiency also increases by 20%, compared with when using circular wafers.
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