Abstract
Wet chemical etching with dry metal deposition method has been developed to fabricate large-area aligned silicon nanowire (SiNW) arrays. The combination of nanoclusters Ag film with proper interconnection and interspaces (of about 20 nm thick), and proper temperature during etching (from 20 to 80 °C) is vital to successfully fabricating large-area uniform SiNW arrays. Raman and photoluminescence spectra of the SiNW arrays indicated their potential applications in chemical detection and optical devices ,respectively.
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