Abstract
We present our latest results on the fabrication and properties of high-Tc Nb3Sn thin-film weak links and SQUID’s prepared by radiation damage of localized regions. Using radiation damage, we have successfully fabricated high-temperature thin-film weak links with current-voltage characteristics similar to those produced either by proximity effect or ion-implantation techniques. The critical current of these weak links obey a relation Ic∝ (T′c-T)3/2 for T<T′c, and Ic∝exp(−γT) for T≳T′c, where T′c is the intrinsic transition temperature of the radiation-damaged region. High-temperature (operation temperature ≳14.5 K) Nb3Sn thin-film SQUID’s with sensing area ∼3 mm2 have been successfully fabricated using these weak links.
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