Abstract
In this manuscript, tin oxide (SnO2) and Germanium dioxide (GeO2) doped SnO2/porous silicon (Si) film/s were fabricated using combined co-precipitation and laser pulsed deposition methods for ultraviolet photodetector/s application. X-ray diffraction (XRD) study indicated the occurrence of high crystalline film/s, wherein nanoparticle diameters of 85 and 50 nm were attained using field emission scanning electron microscopy (FE-SEM). The attained optical bandgap for un-doped SnO2 layer was found to be 3.8 eV which was found to be increased to deeper ultraviolet region (4.2 eV) after GeO2 doping. Further, a considerable photo-current value of 148 μA was attained at 396 nm for the GeO2-doped SnO2 photodetector. This in turn was noticed to significantly increased to 165 μA at deeper UV light (365 nm). The recovery time of the un-doped SnO2 photodetector was found to be 710 ms, while adding 25% of GeO2 as dopant resulted in lower recovery rate (615 ms). Along with the robustness and steadiness of the proposed geometry, it reveals an approachable path for cost-effective optoelectronic system.
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