Abstract
A microplasma reactor with composite dielectric layers for maskless micro/nano plasma etching is presented. The composite dielectric layers include the Si 3 N 4 , SiO 2 and polyimide film. In order to obtain optimum dielectric properties of dielectric films, the process parameters for depositing the Si 3 N 4 and SiO 2 film were obtained through a large number of experimental data. Then the microplasma reactor having inverted pyramidal hollow cathode and metal-composite dielectric layers-metal sandwich structure, is successfully fabricated. The experiment results show that the lifetimes, stability and microdischarge characteristics of the devices are superior to those of earlier fabricated with a single polymer dielectric layer. These microplasma devices are expected to operate in the further maskless scanning plasma etching.
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