Abstract

A novel maskless micro-nano plasma etching system based on parallel probe actuation is proposed. The advantages of this system are high etching rate, high fidelity, simple-structure, and flexible to fabricate various material. As a key component of the system, a microplasma reactor of metal-dielectric-metal sandwich structure with inverted, square pyramidal hollow cathode is designed and successfully fabricated with good quality. Experiment results show that the devices can discharge stably, and the V-I characteristics of the microdischarge at 4 Kpa~16 KPa of Ar and SF <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sub> /Ar gas mixture are also presented. The results of this paper may lay a foundation for further maskless scanning plasma etching.

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