Abstract
Yttria-stabilized zirconia (YSZ) thin films were fabricated by slurry spin coating on NiO-YSZ anode substrates. The effect of processing factors, such as the baking temperature and spinning number was investigated and discussed. According to the thermogravimetric analysis, the organic additives could be removed by baking at 400 °C for 10 min. Under this heating condition for each coating, the defects in the electrolyte film could be repaired by repetitive coating. Dense and crack-free electrolyte films were consequently obtained. When dry hydrogen was used as the fuel and the stationary air as the oxidant, a single cell based on a 14-μm-thick YSZ film produced open-circuit voltages (OCVs) of > 1.10 V in all of the operating temperatures (500–700 °C). The cell exhibited maximum power densities of 634, 493 and 316 mW/cm 2 at 700, 650 and 600 °C, respectively. By using pure oxygen at a flow rate of 100 mL/min, the maximum power density increased to 658 mW/cm 2 at 650 °C.
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