Abstract
The fabrication of a large-area InP/InGaAsP double-heterostructure LED monolithic matrixed array of 144 light-emitting elements is presented. Each LED produces ˜2.5 mW at an operating current of 150mA with per-element bandwidths of ˜200 Mbit/s. The array, which we believe to be the largest integrated optoelectronic circuit fabricated in this material system, is thus capable of very high power output and bandwidth. Such arrays are expected to be useful in many optical data link applications.
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