Abstract
The fabrication and characterization of GaN grown by metalorganic vapor phase epitaxy (MOVPE) using Facet Controlled Epitaxial Lateral Overgrowth (FACELO) technique were carried out. The density and distribution of threading dislocations (TDs) in the GaN epitaxial layer strongly depended on the ELO mask and window widths, and were related to facet structures during the ELO process. It was found that tilt and twist of c-axis in the FACELO GaN was very small. The temperature dependence of PL spectra of the FACELO GaN exhibits that the quality of the crystal is fairly good.
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