Abstract
We fabricated high-quality GaN by low-pressure metalorganic vapour phase epitaxy (LP-MOVPE) using Facet Controlled Epitaxial Lateral Overgrowth (FACELO) technique. Density and distribution of threading dislocations (TDs) in the GaN epitaxial layer strongly depended on the ELO mask and window widths, and were related to facet structures during the ELO process. It was found that tilt and twist of c-axis in the FACELO GaN were very small. Low temperature cathodoluminescence (CL) spectra of the FACELO GaN with low TD density exhibited excellent crystallographic quality.
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