Abstract
A test chip using ion-implanted functions for a 16-Mbit bubble memory device has been designed, fabricated and characterized. A new delineation process for ion-implanted tracks using SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> ion-implantation masks is effective for reducing defects in minor loops. As a result, a bias margin of 22 Oe was obtained for minor loop bubble propagation. Test chip operation over a wide temperature range, from -25°C to 80°C, has been realized.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
