Abstract
Nb3Ge thin-film microbridges are fabricated on a cylindrical substrate to form rf SQUIDs. High temperature operations well above 10 K (up to 17.5 K) are obtained. An intrinsic flux noise of the order of 10−4 Φ0/(Hz)1/2 is estimated from the step rise parameter. Comparison with a theoretical noise indicates a nonsinusoidal current phase relation of the microbridge.
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