Abstract
In this research work, many samples of metal-oxide -silicon were laboratory prepared by thermal evaporation techniques. Some silicon samples were left in the air for a predefined time for SiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> to grow naturally, while others were thermally coated with measured thickness of SiO. A number of the samples were coated with nickel while others with aluminum and one sample was coated with indium. Various tests and measurements were conducted; these include transmittance tests with a range of wave length and for different thicknesses. The ideality factors of the samples and the potential barrier height were calculated from 1-V and C-V characteristics. The photo generated current of the samples were also measured at photoconductive mode under reverse voltage. Quantum efficiency measurement indicated that native oxide samples showed higher quantum efficiency than those thermally deposited samples. Detectivity measurement showed that thermally deposited oxide samples had low detectivity as compared to native oxide samples.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
