Fabrication and electrical properties of an organic–inorganic device based on Coumarin 30 dye

Abstract

A Coumarin 30/p-Si organic-inorganic device was fabricated by forming a Coumarin 30 thin film on a p-Si semiconductor. The resulting structure had excellent rectifying properties. Electrical parameters of the structure were determined from current–voltage (I–V) measurements in the temperature range 300–380K. While the barrier height (ϕb) increased with increasing temperature, the ideality factor and series resistance of the diode decreased. I–V measurements of the structure were also performed under a solar simulator with AM1.5 filter and 100mW/cm2 illumination intensity. The structure had 59μA short-circuit current and 337mV open-circuit voltage. Furthermore, capacitance–voltage (C–V) measurements of an Al/Coumarin 30/p-Si diode were carried out at various frequencies. The ϕb value obtained by using C–V values was compared with that obtained by using I–V data.