Abstract
CdS/Si heterojunctions have been fabricated through depositing (002)-oriented grown CdS on the silicon by using a radio frequency (RF) magnetron sputtering. With increasing deposition times, CdS nanocrystallites are gradually growing. Through analyzing the current density vs voltage characterization, CdS/Si heterojunctions show the rectification effect. The onset voltages, series resistances and ideality factors are heightened with increasing deposition times. However, the reverse current densities are decreasing. For all obtained CdS/Si heterojunctions, the ideality factors are far greater than 1. It is indicated that there are a lot of defects in these heterojunctions. It is believed that through optimizing the fabrication conditions the devices based on CdS/Si heterojunctions will be promising application in the field of optoelectronic devices.
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