Abstract
Transparent conducting aluminium doped ZnO (AZO) thin films were deposited on glass substrates by radio frequency (RF) magnetron sputtering at 200 °C substrate temperature, 150 W of power with various deposition times from 10 minutes to 90 minutes and maintaining working pressure of 2 × 10-3 mbar and 100 mm electrode distance. The structural, electrical and optical properties were studied using XRD, TEM, UV-VIS-NIR Spectrophotometer and four-point probe tester. The (002) diffraction peak of AZO thin films was obtained at Braggs angle of 34.40 which exhibited the hexagonal wurtzite structure of ZnO with c-axis orientation. Electrical resistivity of 1.9 x 10-3 Ω cm and average optical transmittance of 89.7 % in the visible region was obtained for the deposition time of 10 minutes. The optical band gap decreased from 3.48 to 3.013 eV with increase in deposition time.
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