Fabrication and electrical characterization of Si-based rolled-up microtubes

Abstract

Freestanding SiGe:B∕Si:B tubes are fabricated by rolled-up technology. Linear I-V curves are measured both for unreleased and rolled-up films. The bilayer resistance increases after release from the substrate. The electrical resistance of tubes with diameters varying in the range of 0.8−2.2μm, scales from 110to9kΩ as a function of bilayer thickness. Rapid thermal annealing is used to investigate the effect of B activation and Si–Ge interdiffusion on structural and electrical properties of unreleased and rolled-up films.