Abstract
Nickel–phthalocyanine (NiPc) thin film was prepared by thermal evaporation method on n-Si single-crystal substrate to fabricate p-NiPc/n-Si heterojunction. The electrical transport properties of the p-NiPc/n-Si heterojunctions were investigated by temperature-dependent current–voltage (I–V) measurements and room temperature capacitance–voltage (C–V) measurements. The temperature-dependent I–V characteristics revealed that the forward conduction was determined by thermionic-emission and space-charge-limited current (SCLC) mechanisms at low and high voltage, respectively⋅ On the other hand, the reverse current is limited by the carrier generation process. The 1/C2–V plot indicated the junction was abrupt and the junction built-in potential was 0.61V at room temperature.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
