Abstract
Motivated by the need of a rad-hard switch to be used in the future ATLAS Inner Tracker detector (ITk), at Brookhaven National Laboratory we conceived a High-Voltage silicon vertical JFET capable of satisfying most of the strict specifications required for such a switch. By using the available planar technology for the silicon processing, we fabricated in our Clean Room dedicated batches of HV JFETs, first n-type and then p-type channel JFETs. The electrical characterization showed in particular high voltage handling capabilities in the OFF state, for both types of JFETs. In this paper, we describe the design, the fabrication steps and we report the electrical characterization.
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