Abstract
A High-Voltage vertical JFET was conceived at Brookhaven National Laboratory (BNL) in the framework of the High-Voltage Multiplexing program for the ATLAS upgrade of the Inner Tracker (ITk), which was seeking for a rad-hard switch for the silicon strip modules. BNL’s HV-JFET are silicon devices based on a vertical structure. They have been entirely fabricated at BNL using the planar process routinely adopted for the fabrication of silicon sensors. Before irradiation, they show low leakage currents and high breakdown voltages in the OFF state and high currents in the ON state. These specs are good enough for the switch to be used for un-irradiated strip modules. Then, a neutron irradiation has been performed at the TRIGA nuclear reactor at Jozef Stefan Institute (Ljubljana, Slovenia) to assess the capability of this device to be usable after the ITk radiation levels. The irradiated devices have been characterized as well and the measurements are presented in this report.
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