Fabrication and characterization of Zn-doped CdTe nanowires

Abstract

At 850 °C, Zn-doped CdTe nanowires with an average diameter of about 40 nm and lengths up to several tens of micrometers were fabricated by a CVD approach. The nanowires were detected by SEM, XRD, TEM, HRTEM, EDS, SAED, and XPS, where the as-synthesized CdZnTe nanowires have high-quality crystalline structure and grow along the 〈001〉 direction and the Cd/Zn ratios of these nanowires are close to those expected from the starting compositions. The corresponding growth mechanism of the nanowires is also explained.