Highly-Responsive Broadband Photodetector Based on Graphene-PTAA-SnS2 Hybrid.

Guigang Zhou,Huancheng Zhao,Zhengchun Peng,Xiangyang Li,Honglei Wu,Hua An,Zhenhua Sun,Ling Li,Shuangchen Ruan

doi:10.3390/nano12030475

Guigang Zhou, Huancheng Zhao + Show 7 more

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https://doi.org/10.3390/nano12030475

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Abstract

The development of wearable systems stimulate the exploration of flexible broadband photodetectors with high responsivity and stability. In this paper, we propose a facile liquid-exfoliating method to prepare SnS2 nanosheets with high-quality crystalline structure and optoelectronic properties. A flexible photodetector is fabricated using the SnS2 nanosheets with graphene-poly[bis(4-phenyl) (2,4,6-trimethylphenyl) amine (PTAA) hybrid structure. The liquid-exfoliated SnS2 nanosheets enable the photodetection from ultraviolet to near infrared with high responsivity and detectivity. The flexible broadband photodetector demonstrates a maximum responsivity of 1 × 105 A/W, 3.9 × 104 A/W, 8.6 × 102 A/W and 18.4 A/W under 360 nm, 405 nm, 532 nm, and 785 nm illuminations, with specific detectivity up to ~1012 Jones, ~1011 Jones, ~109 Jones, and ~108 Jones, respectively. Furthermore, the flexible photodetector exhibits nearly invariable performance over 3000 bending cycles, rendering great potentials for wearable applications.

Highlights

Flexible optoelectronic devices have attracted considerable attentions due to their potential applications in wearable systems [1–4], imaging sensing [5], and communications [6], where especially flexible broadband photodetectors with high responsivity and stability are highly desired
The excellent performance of the flexible devices remains relatively constant after bending over 3000 times, rendering a high bending endurance. These results indicate that the flexible photodetectors based on the hybrid structure can be featured as excellent candidates for flexible and wearable optoelectronic devices
EV match well with previous reported values [26]. These results indicate that the SnS2 nanosheets possess a and gooda high purity and aquality

Summary

Introduction

Flexible optoelectronic devices have attracted considerable attentions due to their potential applications in wearable systems [1–4], imaging sensing [5], and communications [6], where especially flexible broadband photodetectors with high responsivity and stability are highly desired. 2D semiconductors are suitable as active channel materials in wearable optoelectronic devices owing to their atomically thin structure, mechanical flexibility, strong in-plane covalent bonding, and excellent electrical and optoelectronic properties [12,13]. Their compatibility with other materials, including organic semiconductors [14,15], quantum dots [16,17], nanosheets [18], perovskites [19], etc., is conducive to form heterojunctions with splendid properties. These hybrid heterostructures can significantly improve the device performance compared with that of individual materials.

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