Abstract
Boron-doped p-type diamond films were prepared by microwave-plasma chemical vapor deposition (MPCVD) method. Transparent ZnS/diamond film heterojunction diodes were fabricated by depositing n-type ZnS films on the p-type diamond substrates using radio-frequency (RF) magnetron sputtering method for the first time. Current–voltage (I–V) characteristics of the devices were examined, and the results showed the distinct rectifying characteristics with a turn-on voltage of about 1.1V. The diode possessed an optical transmission of 50–70% from 500nm to 800nm wavelength region.
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