Abstract
Boron-doped p-type nanocrystalline diamond (NCD) films were grown by microwave plasma chemical vapor deposition (MPCVD) method via introduction of the gas mixtures of methane, hydrogen and diborane. The effects of B/C ratios of gas mixtures on the electrical properties of NCD films were investigated by Hall effect measurement system. N-type ZnO films were prepared on NCD films by radio-frequency (RF) magnetron sputtering method. The dependence of electrical resistivity and carrier concentration of ZnO thin films on oxygen partial pressure was studied. In addition, I-V characteristic of the n-ZnO / p-NCD heterojunction was measured. The results showed a rectifying behavior of this structure.
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