Abstract

The structure of Pd-silicided field emitters based on the silicon micromachining technology has been demonstrated. The uniform and extremely sharp silicided emitters are formed using wet chemical etching, low-temperature oxidation sharpening, coating metal and furnace annealing in N2 ambient. The sheet resistance and Auger electron spectroscope results depict the transformation of silicidation. Transmission electron microscope of bright-field, dark-field, and diffraction pattern show the formation of silicided emitters. These emitters have potential applications in vacuum microelectronics to obtain superior lifetime, relaibility, and stability.© (1995) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.