Abstract
Tris(8-hydroxyquinolinato) aluminium (Alq3 based top-gate-type organic light emitting-transistors (OLETs) have been fabricated by using a simple solution process. The OLET consists of a bulk layer of indium-tin oxide (ITO) and hole injection layer of poly(2,3-dihydrothieno-1,4-dioxin)– poly(styrenesulfonate) (PEDOT:PSS) as an anode (source), organic electroluminescent layer of Alq3 and aluminium (Al) as cathode (drain) and gate. A Current–voltage–luminance (J–V–L) characteristic of the OLETs shows that the current density is depended on polarity of gate bias. Initial internal electric field contributes to the charge diffusion between gate and cathode channel. A vice versa characteristic observed for luminance at cathode–anode and gate–anode channels.
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