Abstract
Ruthenium thin film was obtained by the liquid delivery metal organic chemical vapor deposition method using a new Ru(C8H13O2)3 precursor for the advanced capacitor electrode in Gbit-scale dynamic random access memory. Deposition was done on a TiN barrier layer in the range of 250–400°C. The thin film characterization was performed in terms of the resistivity, change of crystal structure, surface morphology, microstructure and film purity. The resistivity depended on the impurity, grain shape and crystalline structure of the film. The minimum resistivity of 13.9 µΩ·cm was obtained at 400°C. The X-ray diffraction and X-ray photoelectron spectroscopy results indicate that the RuO2 phase and the silicidation are not observed and are independent of the deposition temperature. The carbon and hydrogen contaminants in the Ru film were shown to disturb the crystal preferred orientation growth. The Ru film was found to grow perpendicular to the substrate and to be the columnar structure.
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